发明名称 Semiconductor device with surge protection circuit
摘要 A semiconductor device includes a memory cell to and from which data is written and read in accordance with voltage supplied, a power supply circuit generating the voltage supplied to the memory cell, a microcomputer, an external terminal, a surge protection circuit clamping at a predetermined voltage value a voltage supplied to the external terminal, and a first switch circuit switching to output to one of the power supply circuit and the microcomputer a voltage having passed through the surge protection circuit. The power supply circuit includes a voltage conversion circuit changing the magnitude of a voltage received from the first switch circuit, and a second switch circuit switching to supply the memory cell with one of the voltage received from the first switch circuit and the voltage changed in magnitude.
申请公布号 US7719814(B2) 申请公布日期 2010.05.18
申请号 US20070826090 申请日期 2007.07.12
申请人 RENESAS TECHNOLOGY CORP. 发明人 KOBAYASHI MUTSUO;OOISHI TSUKASA
分类号 H02H3/22;G11C7/24 主分类号 H02H3/22
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