| 摘要 |
PURPOSE: A memory device using a two-terminal magnetic memory cell and a spin-field effect transistor is provided to reduce the area of a cell by arranging one selection transistor in each word-line and bit-line. CONSTITUTION: A two-terminal magnetic memory cell(130) is installed between a word-line(110) and a bit-line(120). A spin-field effect transistor(140) is installed on each end of the word-line and the bit-line. A first ferromagnetic layer, a first insulation layer, a second ferromagnetic layer, a second insulation layer and a conductive layer are successively stacked to form the two-terminal magnetic memory cell and the source region and the drain region of the spin-field effect transistor.
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