NITRIDE BASED HETERO-JUNCTION FEILD EFFECT TRANSISTOR

摘要

PURPOSE: A nitride based hetero-junction field effect transistor is provided to increase a channel area for driving the transistor with a large current by forming the three dimensional structure of gate electrode. CONSTITUTION: A first n-type gallium nitride layer(110a) is formed on a substrate(100). An un-doped gallium nitride layer(120) is formed on the center of the first n-type gallium nitride layer. A drain electrode is formed a part of the first n-type gallium nitride layer. A p-type gallium nitride layer(130), an aluminum gallium nitride layer(140) and a second n-type gallium nitride layer includes a groove in order to expose the center part of the un-doped gallium nitride layer. A source electrode is formed on a part of the second n-type gallium nitride layer. A gate electrode is formed along the surface of the groove.