SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent the defects of the device due to an oxide on the surface of a source and a drain electrode layers by performing a surface treatment process before an oxide semiconductor layer is formed on a gate insulation layer, the source and the drain electrode layers. CONSTITUTION: A gate electrode layer(202) is formed on a substrate(200). A gate insulation layer(204) is formed on the gate electrode layer. A source electrode layer(206a) and a drain electrode layer(206b) are formed on the gate insulation layer. A plasma treatment process is performed on the surface of the gate insulation layer, the source electrode layer and the drain electrode layer. An oxide semiconductor layer is formed on the gate insulation layer, the source electrode layer and the drain electrode layer.