| 摘要 |
<p>PURPOSE: A fine pattern forming method of a semiconductor device is provided to form a uniform micro pattern while using a photoresist layer with wide thickness. CONSTITUTION: A fine pattern forming method of a semiconductor device comprises the following steps: forming a first photoresist layer by spraying a first photoresist composition on the upper side of an etched layer; and forming a second photoresist layer by spraying the first photoresist composition again on the upper side of the first photoresist layer. The photoresist composition contains a photosensitive polymer including a recurring unit marked as chemical formula 1.</p> |
