SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device (10) includes: a semiconductor substrate (11); an internal electrode (12A) and an internal electrode (12B) arranged on the surface of the semiconductor substrate (11); a first through electrode (17A) which penetrates through the semiconductor substrate (11) in the thickness direction and is electrically connected to the internal electrode (12A); and a second through electrode (17B) which is electrically connected to the internal electrode (12B).  The internal electrode (12A) has a thickness greater than that of the internal electrode (12B).  The second through electrode (17B) may penetrate through the internal electrode (12B).