发明名称 SURFACE TREATMENT FOR MOLECULAR BONDING
摘要 <p>A method of bonding a first substrate (210) on a second substrate (220) by molecular bonding, the method comprising the following steps: ° forming a layer of insulation (212) on the bonding face (210a) of the first substrate (210); ° chemical -mechanical polishing said layer of insulation (212); ° activating the bonding surface of the second substrate (220) by plasma treatment; and ° bonding together the two substrates (210, 220) by molecular bonding; the method being characterized in that it further comprises, after the chemical -mechanical polishing step and before the bonding step, a step of etching the surface (212a) of the layer of insulation (212) formed on the first substrate.</p>
申请公布号 WO2010052151(A1) 申请公布日期 2010.05.14
申请号 WO2009EP64121 申请日期 2009.10.27
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;CASTEX, ARNAUD;GAUDIN, GWELTAZ;BROEKAART, MARCEL 发明人 CASTEX, ARNAUD;GAUDIN, GWELTAZ;BROEKAART, MARCEL
分类号 C03C15/00;C03C17/22;C03C27/06 主分类号 C03C15/00
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