发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF
摘要 PURPOSE: A semiconductor memory device and a driving method thereof are provided to reduce manufacturing cost of a semiconductor memory device by reducing time required for test operation. CONSTITUTION: A latency signal generation unit(210) generates a latency signal corresponding to a read command and an operating frequency. An output enable signal generation unit(220) generates the output enable signal by synchronizing the latency signal to a DLL(Delay Locked Loop) clock signal. An output order decision unit(230) synchronizes the sequence signal to the DLL clock signal.
申请公布号 KR20100050914(A) 申请公布日期 2010.05.14
申请号 KR20080110036 申请日期 2008.11.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JAE IL;SHIN, SUN HYE
分类号 G11C11/4093;G11C11/407;G11C11/4076;G11C11/4096 主分类号 G11C11/4093
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