| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to the collection efficiency of an incident light by forming a photodiode and a top electrode as a hemisphere. CONSTITUTION: A CMOS circuit is formed on a semiconductor substrate(10). An inter-layer insulating film(20) including a metal wiring(30) is formed on the semiconductor substrate. The bottom electrode(45) is formed on an inter-layer insulating film including the metal wiring. An intrinsic layer is formed on the inter-layer insulating film including the bottom electrode. An intrinsic pattern(55) of the micro lens form is formed. A conductive layer(65) is formed on the inter-layer insulating film in which the intrinsic layer pattern is formed.
|
