发明名称 |
A METHOD OF FABRICATING A FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE |
摘要 |
A method of fabricating a semiconductor using a fin field effect transistor (FINFET) is disclosed. In a particular embodiment, a method includes depositing, on a silicon substrate, a first dummy structure having a first sidewall and a second sidewall separated by a first width. The method also includes depositing, on the silicon substrate, a second dummy structure concurrently with depositing the first dummy structure. The second dummy structure has a third sidewall and a fourth sidewall that are separated by a second width. The second width is substantially greater than the first width. The first dummy structure is used to form a first pair of fins separated by approximately the first width. The second dummy structure is used to form a second pair of fins separated by approximately the second width. |
申请公布号 |
WO2010054139(A1) |
申请公布日期 |
2010.05.14 |
申请号 |
WO2009US63478 |
申请日期 |
2009.11.06 |
申请人 |
QUALCOMM INCORPORATED;SONG, SEUNG-CHUL;ABU-RAHMA, MOHAMED HASSAN;HAN, BEOM-MO |
发明人 |
SONG, SEUNG-CHUL;ABU-RAHMA, MOHAMED HASSAN;HAN, BEOM-MO |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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