NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
摘要
<p>Reactor designs for use in ammonothermal growth of group-Ill nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel.</p>
申请公布号
WO2010053964(A1)
申请公布日期
2010.05.14
申请号
WO2009US63238
申请日期
2009.11.04
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;PIMPUTKAR, SIDDHA;KAMBER, DERRICK S.;SPECK, JAMES S.;NAKAMURA, SHUJI
发明人
PIMPUTKAR, SIDDHA;KAMBER, DERRICK S.;SPECK, JAMES S.;NAKAMURA, SHUJI