| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method the same are provided to improve the reliability of a device by forming a floating gage with more than two patterns and increasing the contact area of the floating gate and the control gate. CONSTITUTION: An element isolation film(11) is formed on a semiconductor substrate(10). A first polysilicon pattern is formed on the semiconductor substrate including the element isolation film. The dielectric film and the second polysilicon pattern(25) are formed on the first poly-silicon pattern. At least more than two first poly silicon patterns forming a one cell are separated from each other. A dielectric film is the ONO(Oxide-Nitride-Oxide) film.</p> |
