| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method the same are provided to improve the reliability of a device by making the size of a nitride layer same in an SONOS(Silicon-Oxide-Nitride-Oxide-Silicon) structure and reducing the fail of a device. CONSTITUTION: A first oxide film pattern, a first nitride film pattern, a second oxide film pattern, and a first polysilicon pattern(26) are formed on a semiconductor substrate(10). A first impurity region(15) and a second impurity region(17) are formed in the semiconductor substrate between the first polysilicon patterns. A third oxide film pattern and the second polysilicon pattern(36) are formed between the first polysilicon pattern on the first impurity region. A spacer(70) is formed in the sidewall of the first polysilicon pattern on the second impurity region. The first nitride film patterns are the same size.</p> |
