PREVENTING UNINTENDED PERMANENT WRITE-PROTECTION IN NONVOLATILE MEMORY
摘要
<p>An input voltage range may be established between different voltage levels used for different programming functions of an integrated circuit device, thus implementing a protection zone ("safe zone") of non-operation to facilitate prevention of an unintended irreversible programming operation, e.g., permanent write protection of a nonvolatile programmable memory in the device.</p>
申请公布号
WO2010053749(A1)
申请公布日期
2010.05.14
申请号
WO2009US62156
申请日期
2009.10.27
申请人
MICROCHIP TECHNOLOGY INCORPORATED;MIETUS, DAVID, FRANCIS;BEAUCHAMP, BRUCE, EDWARD;ALEXANDER, SAMUEL;ABERRA, EZANA, H.
发明人
MIETUS, DAVID, FRANCIS;BEAUCHAMP, BRUCE, EDWARD;ALEXANDER, SAMUEL;ABERRA, EZANA, H.