发明名称 PREVENTING UNINTENDED PERMANENT WRITE-PROTECTION IN NONVOLATILE MEMORY
摘要 <p>An input voltage range may be established between different voltage levels used for different programming functions of an integrated circuit device, thus implementing a protection zone ("safe zone") of non-operation to facilitate prevention of an unintended irreversible programming operation, e.g., permanent write protection of a nonvolatile programmable memory in the device.</p>
申请公布号 WO2010053749(A1) 申请公布日期 2010.05.14
申请号 WO2009US62156 申请日期 2009.10.27
申请人 MICROCHIP TECHNOLOGY INCORPORATED;MIETUS, DAVID, FRANCIS;BEAUCHAMP, BRUCE, EDWARD;ALEXANDER, SAMUEL;ABERRA, EZANA, H. 发明人 MIETUS, DAVID, FRANCIS;BEAUCHAMP, BRUCE, EDWARD;ALEXANDER, SAMUEL;ABERRA, EZANA, H.
分类号 G11C16/22 主分类号 G11C16/22
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