| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method the same are provided to improve the reliability of a memory device by removing oxide film which is interposed between a memory gate and a select gate. CONSTITUTION: An ONO(Oxide-Nitride-Oxide) layer pattern(20) is formed on a semiconductor substrate(10). A first polysilicon pattern(31) is formed on the oxide-nitride-oxide film pattern. The oxide film is formed on the semiconductor substrate including the oxide-nitride-oxide film pattern and the first polysilicon pattern. A nitride layer pattern is arranged between the oxide-nitride-oxide film and the oxide film. The second polysilicon pattern(61) is formed on the oxide film.</p> |
