PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD AND PHOTOELECTRIC CONVERSION DEVICE
摘要
<p>Provided is a method for manufacturing a photoelectric conversion device which can effectively prevent leak of current via an intermediate contact layer separation groove. The method includes: a step for forming a top layer (91) containing amorphous silicon as a main content; a step for forming on the top layer (91), an intermediate contact layer (93) which is electrically and optically connected to the top layer (91); a step for applying a pulse laser to remove the intermediate layer (93) and forming an intermediate contact layer separation groove (14) which reaches the top layer (91) so as to separate the intermediate contact layer (93); and a step for forming a bottom layer (92) containing microcrystal silicon as a main content on the intermediate contact layer (93) and in the intermediate contact layer separation groove (14), the bottom layer (92) being connected electrically and optically to the intermediate contact layer (93). The intermediate contact layer separation groove (14) is terminated in the i-layer of the top layer (91).</p>
申请公布号
WO2010052981(A1)
申请公布日期
2010.05.14
申请号
WO2009JP67247
申请日期
2009.10.02
申请人
MITSUBISHI HEAVY INDUSTRIES, LTD.;UDA, KAZUTAKA;BABA, TOMOYOSHI;ISHIDE, TAKASHI;KAWAZOE, KOHEI;NISHIMIYA, TATSUYUKI