METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a semiconductor device is provided to secure heat resistance of a memory cell area and a peripheral circuit region by improving an erasing property of a memory device. CONSTITUTION: A first polysilicon layer is formed in the peripheral circuit region on a substrate(200). The first polysilicon layer has a first thickness. A laminating structure(220) is formed in the memory cell area on the substrate. A laminating structure has a tunneling insulating layer(210), a charge storage layer, and a blocking insulating layer. A second polysilicon layer is formed on the blocking insulating layer. The second polysilicon layer has second thickness. The second thickness is smaller than the first thickness. The gate electrode is formed by making the first and second polysilicon layer silicide.