发明名称 LED WHICH HAS CURRENT BARRIER LAYER DISTRIBUTED CORRESPONDING TO UPPER ELECTRODES AND THE FABRICATING METHOD THEREOF
摘要 <p>A LED is provided which has a current barrier layer(120) located below an upper electrode(10).A conductive optical antireflection layer (101) is formed between the upper electrode and a current expanding layer (100).The shape of the current barrier layer is identical to the shape of the upper electrode.An antireflection coating (103) is provided on the upper surface of the conductive optical antireflection layer.A method for fabricating the LED is also provided.</p>
申请公布号 WO2010051680(A1) 申请公布日期 2010.05.14
申请号 WO2009CN00537 申请日期 2009.05.18
申请人 SHEN, GUANGDI;CHEN, YIXIN 发明人 SHEN, GUANGDI;CHEN, YIXIN
分类号 H01L33/00 主分类号 H01L33/00
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