| 摘要 |
<p>PURPOSE: A flash memory device and manufacturing method the same are provided to reduce a memory cell without interfering the length of a gate by forming a first nitride pattern to be parallel with the side of the trench in vertical to the semiconductor substrate. CONSTITUTION: A trench(15) is formed in a semiconductor substrate(10) in which an active region is defined. A first impurity region(17) is formed in the semiconductor substrate including the trench. An oxide film is formed on the semiconductor of the substrate including the trench. A nitride pattern(31) is formed on the sidewall of the trench. The polysilicon pattern is formed on the oxide film. The nitride pattern is formed to be parallel with the side wall of the trench.</p> |
