| 摘要 |
A METHOD FOR FORMING AN ISOLATION STRUCTURE (164) ON A SEMICONDUCTOR SUBSTRATE (102) INCLUDES OPENING A PORTION OF A PAD OXIDE LAYER (104) OVERLYING THE SUBSTRATE (102) USING A PROCESS GAS INCLUDING AN ETCHANT GAS AND A POLYMER-FORMING GAS. A PORTION OF THE SUBSTRATE (102) EXPOSED BY THE OPENING STEP IS ETCHED TO FORM A TRENCH (118) HAVING A FIRST SLOPE (170) AND A SECOND SLOPE (172). THE FIRST SLOPE (170) IS GREATER THAN 45 DEGREES, AND THE SECOND SLOPE (172) IS LESS THAN 45 DEGREES. THE TRENCH (118) IS FILLED TO FORM THE ISOLATION STRUCTURE (164).
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