METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to improve the property and reliability of whole device by preventing a defect due to a time delay in a CMP process. CONSTITUTION: An insulating layer(104) is formed on a semiconductor substrate(102). The insulating layer has a routing region. A barrier film(106) is formed on the insulating layer. The metal layer(108) is formed on the barrier film. The metal layer fills the routing region. A part of a metal and barrier layer is removed. The outcome of the semiconductor substrate is annealed. A capping film is formed on the insulating layer, the metal layer, and the barrier film which are annealed.