| 摘要 |
A METHOD OF REPRODUCIBLY MANUFACTURING CIRCUIT CARRIERS WITH VERY FINE CIRCUIT STRUCTURES AND AN ELECTROPHORETIC VARNISH TO BE APPLIED IN THIS METHOD ARE DESCRIBED IN WHICH A DIELECTRIC SUBSTRATE COMPRISING A BASE METAL SURFACE IS PROVIDED, A VARNISH LAYER (3) IS APPLIED ONTO THE SUBSTRATE SURFACE ELECTRODEPOSITING THE ELECTROPHORETIC VARNISH, THEREAFTER THE VARNISH LAYER (3) IS ABLATED IN AT LEAST PARTS OF THE REGIONS THAT DO NOT CORRESPOND TO THE METAL PATTERN TO BE FORMED BY MEANS OF ULTRAVIOLET RADIATION (5), THE BASE METAL SURFACE BEING LAID BARE, AND FINALLY THE BARE BASE METAL SURFACE IS ETCHED.
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