| 摘要 |
The embodiment relates to a semiconductor light-emitting device and a manufacturing method thereof. The semiconductor light-emitting device according to the embodiment comprises: a secondary electrode layer; a light-emitting unit that includes plural compound semiconductor layers at a portion below the secondary electrode layer; a primary insulating layer at the other portion below the secondary electrode layer; an electrostatic discharge protection unit that includes plural compound semiconductor layers below the primary insulating layer; a primary electrode layer that electrically connects the light-emitting unit with the electrostatic discharge protection unit; and a wiring layer that electrically connects the electrostatic discharge protection unit with the secondary electrode layer. |
