A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.
申请公布号
WO2009155272(A4)
申请公布日期
2010.05.14
申请号
WO2009US47474
申请日期
2009.06.16
申请人
CARL ZEISS SMT. INC.;SCIPIONI, LAWRENCE;KNIPPELMEYER, RAINER;RIEDESEL, CHRISTOPH;MORGAN, JOHN;MANTZ, ULRICH;WAGEMANN, ULRICH