| 摘要 |
<p>PURPOSE: A phase change ram device and a method of manufacturing the same are provided to improve a current driving performance by increasing the area of a diode. CONSTITUTION: A phase change memory device comprises a semiconductor substrate(100), an insulating layer(120), a diode(140), and a phase change memory cell. The insulating layer is arranged on the semiconductor substrate. The insulating layer comprises a contact hole(H). The critical dimension of end of a contact hole is larger than that of top and bottom. The diode is formed within the contact hole. The phase change memory cell is formed on the diode.</p> |
