PREPARING METHOD OF SEMICONDUCTOR DEVICE COMPRISING PROCESS FOR MASK PATTERN OF ION IMPLANTATION

摘要

PURPOSE: A preparing method of a semiconductor device comprising process for a mask pattern of ion implantation is provided to prevent a defect of a photoresist scum by processing the top of a gate line with HF, and O2 plasma before forming a mask pattern. CONSTITUTION: A gate line is formed in a semiconductor substrate in which an element isolation film is included. The whole surface of the gate line and the semiconductor substrate are processed by HF, O2 plasma or O3 plasma. The photoresist film is formed in the semiconductor substrate and the whole of the gate line. A photoresist pattern is formed by the photolithographic process of the photoresist film. The photoresist pattern is used as an ion implantation mask and ion implantation is processed on the substrate of lower part of an opening.