| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce total area of a semiconductor memory device by generating a signal which controls operation timing of an active operation and a pre charge operation through one control circuit. CONSTITUTION: A plurality of banks implements a plurality of expected operations in response to a plurality of bank operation control signals. The plurality of bank control units generates the bank operation control signals in response to each activation range of a plurality of bank sequential signals. A bank sequential signal generation unit(300) generates the bank sequential signals transferred to the bank control units respectively.
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