METHOD FOR STRIPPING GaN FROM SAPPHIRE SUBSTRATE WITHOUT DAMAGE BY USING SOLID-STATE LASER

摘要

A method for stripping GaN from a sapphire substrate using a solid-state laser is provided. A solid-state laser is used as laser light source, point-by-point and line-by-line scanning is performed by using a small spot. The perimeter of the small spot is 3~1000 µm, with the longest diameter or distance between the two farthest corners not exceeding 400 µm. Energy distribution of the small spot is as follows: energy density of the spot is the strongest in the center of the spot, and becomes weaker as it closer the periphery of the spot. The method can simplify laser lift-off process, and improve work efficiency.