| 摘要 |
PROBLEM TO BE SOLVED: To provide a protective circuit which is provided with an appropriate constitution and in which the occupied area is small in order to make the most of the characteristics of a display device, using an oxide semiconductor which excels in the operation characteristics and which can be manufactured at a low temperature. SOLUTION: In the display device, a protective circuit is constituted, by using a non-linear element having a gate insulating film covering a gate electrode, a first wiring layer and a second wiring layer which lie over the gate insulating film whose end portions overlap with the gate electrode, and an oxide semiconductor layer which overlaps, at least with the gate electrode and in contact with side portions and upper plane portions of conductive layers in the gate insulating film, the first wiring layer and the second wiring layer. By having the gate electrode of the non-linear element connected to the scanning line or the signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so that the potential of the gate electrode is applied and thereby stable operation is performed due to the reduction of connected resistance and the occupied area of the connection part is reduced. COPYRIGHT: (C)2010,JPO&INPIT |
