| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. <P>SOLUTION: The apparatus for the thermal processing of a substrate surface involves irradiating the substrate surface 32 with first and second images 150, 250 to process regions of the substrate surface 32 at a substantially uniform peak processing temperature along a scan path. The first image 150 may serve to effect spike annealing of the substrates while the second image 250 may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers 30. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
