| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element for suppressing occurrence of microcracks in a multilayer nitride semiconductor layer and improving junction reliability between the multilayer nitride semiconductor layer and a support substrate. <P>SOLUTION: After performing crystal growth of the multilayer nitride semiconductor layer 2 having a lamination structure of a buffer layer 21, an n-type nitride semiconductor layer 22, a luminous layer 23, and a p-type nitride semiconductor layer 24 to one surface side of a transparent crystal wafer 1 made of a sapphire substrate, the multilayer nitride semiconductor layer 2 is joined to one surface side of a support wafer 30 that becomes the foundation of a support substrate 3. Then, a cutoff groove 6 is formed to reach at least the multilayer nitride semiconductor layer 2 from the other surface side of the transparent crystal wafer 1. After that, light is applied from the other surface side of the transparent crystal wafer 1 to separate the transparent crystal wafer 1 from the multilayer nitride semiconductor wafer 2 before dicing along the cutoff groove 6. <P>COPYRIGHT: (C)2010,JPO&INPIT |
