| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material which causes few development defects, gives a good resist pattern shape after development and is effective in immersion lithography; and to provide a pattern forming method. <P>SOLUTION: The resist material comprises (A) a polymer compound having a repeating unit of formula (1), (B) a polymer compound which becomes soluble in an alkali developer under the action of an acid, (C) a compound which generates an acid upon exposure to high-energy rays, and (D) an organic solvent, wherein R<SP>1</SP>is H, methyl or trifluoromethyl, and X represents a structure represented by any of general formulae (X-1) to (X-3), wherein R<SP>2a</SP>, R<SP>2b</SP>, R<SP>3a</SP>and R<SP>3b</SP>in the formula (X-1), R<SP>5a</SP>, R<SP>5b</SP>, R<SP>6a</SP>, R<SP>6b</SP>, R<SP>7a</SP>and R<SP>7b</SP>in the formula (X-2), and R<SP>8a</SP>, R<SP>8b</SP>, R<SP>9a</SP>and R<SP>9b</SP>in the formula (X-3) each independently represent a single bond, H, hydroxyl, halogen or a 1-15C linear, branched or cyclic monovalent organic group, and R<SP>4</SP>in the formula (X-1) is 1-20C linear, branched or cyclic alkyl. Hereby a resist material using a new polymer additive having a cyclic acetal structure is formed, and this polymeric material can adjust various properties such as water repellency, planing property, lipophilicity, acid decomposability and hydrolyzability. <P>COPYRIGHT: (C)2010,JPO&INPIT |
