发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND THE SEMICONDUCTOR SUBSTRATE OBTAINED BY THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing a semiconductor substrate that is formed of a semiconductor layer reduced in thickness with density, smoothness, and high performance by baking a printed layer, which is provided on a base material and contains semiconductor nanoparticles, at low temperature in a short time. SOLUTION: The method of manufacturing the semiconductor substrate includes the steps of: forming the printed layer on the base material by printing a pattern of a coating solution containing the semiconductor nanoparticles; and forming the patterned semiconductor layer by baking the printed layer. The printed layer is baked by exposure to surface wave plasma generated by applying microwave energy. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010109352(A) 申请公布日期 2010.05.13
申请号 JP20090227166 申请日期 2009.09.30
申请人 DAINIPPON PRINTING CO LTD 发明人 HOJO MIKIKO;YOSHI NAONOBU;TAKE SEIJI
分类号 H01L21/208;H01L21/336;H01L29/786 主分类号 H01L21/208
代理机构 代理人
主权项
地址