REFERENCE WAFER FOR CALIBRATION OF DARK FIELD INSPECTION SYSTEM, METHOD OF MANUFACTURING THE SAME, METHOD OF CALIBRATION OF DARK FIELD INSPECTION SYSTEM, THE DARK FIELD INSPECTION SYSTEM, AND WAFER INSPECTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technique which is capable of guaranteeing measurement results of a dark field inspection system up to minute areas. SOLUTION: A bulk wafer which has microroughness of an irregular rugged pattern formed on a surface with high precision and has roughness of the surface roughness guaranteed is used as a reference wafer to calibrate the dark field inspection system. The microroughness can be formed with high precision by chemical treatment with a chemical. This microroughness is measured by using AFM, and an expected haze value is obtained on the basis of measurement values. Thereafter, haze of the surface of the reference wafer is measured by the dark field inspection system to be calibrated, to obtain an actually measured haze value, and a difference between the expected haze value and the actually measured haze value is obtained. The haze measurement parameter of the dark field inspection system is adjusted on the basis of this difference so that the actually measured haze value coincides with the expected haze value. COPYRIGHT: (C)2010,JPO&INPIT