| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bar-shaped semiconductor laser device that suppresses an increase of variations in oscillation wavelength. Ž<P>SOLUTION: The bar-shaped semiconductor laser device 1 includes a GaN substrate 2, and a semiconductor layer 3 formed on the main face of the GaN substrate 2 and having a plurality of laser device parts 3a. The plurality of laser device parts 3a are arrayed in an A direction (a [11-20] direction). The central part O1 of the main face of the GaN substrate 2 has an off angle α of about 0.05±0.1 degrees from a (0001) face in the direction along the A direction (the [11-20] direction). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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