| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of especially removing a damaged layer of a gate insulation film suffered from plasma damage and improving reliability of the gate insulation film. SOLUTION: When the MONOS type memory transistor region 101 and a transistor region 100 are provided on the same semiconductor substrate, the method of manufacturing a semiconductor device includes: a step of forming a tunnel oxide film 7 on a semiconductor substrate of the MONOS type memory transistor region; a step of forming a silicon nitride film 8 on the tunnel oxide film 7 and an a gate insulation film 5 of the transistor region, and forming a silicon oxide film 9 on the silicon nitride film; a step of forming a mask film 10 on the MONOS type memory transistor region; a step of removing the silicon oxide film 9 by using the mask film 10; a step of removing the silicon nitride film 8 by dry etching; and a step of removing an upper layer of the gate insulation film 5 of the transistor region 100 by wet etching. COPYRIGHT: (C)2010,JPO&INPIT |
