发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME
摘要 The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.
申请公布号 US2010117713(A1) 申请公布日期 2010.05.13
申请号 US20090615525 申请日期 2009.11.10
申请人 RENESAS TECHNOLOGY CORP. 发明人 KATOH KAORU;KOYA SHIGEKI;TAKATANI SHINICHIRO;SHIGENO YASUSHI;NAKAJIMA AKISHIGE;OGAWA TAKASHI
分类号 H03K17/687 主分类号 H03K17/687
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