IMPROVEMENT APPARATUS OF PHOTORESIST'S UNDERCUT LINE PATTERN AND IMPROVEMENT METHOD

摘要

PURPOSE: A device and a method for improving an undercut line pattern of a photoresist are provided to improve an undercut line pattern of the photoresist by changing only interference lithography process parameter. CONSTITUTION: A laser(10) emits an argon ion gas beam with a short wavelength. A space filter is installed in front of the laser and filters the emitted beam. A substrate(40) is rotatably installed on the stage separated from a shutter with a preset distance. A mirror(50) is rotatably installed on the stage and faces the substrate with a preset angle. The mirror receives the beam emitted from the laser and reflects the beam to the photoresisst coated on the substrate, and interferes with the beam directly received from the photoresist.