| 摘要 |
PROBLEM TO BE SOLVED: To provide: an insulating film-forming composition which can suitably be used in semiconductor devices expecting high integration and multi-layering and can be used in forming an insulating film having a low dielectric constant excellent in mechanical strength and chemical solution resistance; an insulating film; and a method of forming the same. SOLUTION: The insulating film-forming composition includes a hydrolysis condensate obtained by subjecting a compound 1 represented by formula (1): R<SB>a</SB>Si(OR<SP>1</SP>)<SB>4-a</SB>(wherein R is a 1-2C alkyl group, a vinyl group, an allyl group, an acetyl group or a phenyl group; a is an integer of 1-2; and R<SP>1</SP>is a 1-3C alkyl group, a vinyl group, an allyl group, an acetyl group or a phenyl group), a compound 2 of formula (2): R<SP>2</SP><SB>b</SB>(R<SP>3</SP>O)<SB>3-b</SB>Si-(R<SP>6</SP>)<SB>d</SB>-Si(OR<SP>4</SP>)<SB>3-c</SB>R<SP>5</SP><SB>c</SB>[wherein R<SP>2</SP>to R<SP>5</SP>are the same or different and each a monovalent organic group; b and c are the same or different and each an integer of 0-1; R<SP>6</SP>is a phenylene group or a group represented by -(CH<SB>2</SB>)<SB>m</SB>- (wherein m is an integer of 1-6); and d is 0 or 1], and a hydrolyzable polycarbosilane to hydrolysis condensation and an organic solvent. COPYRIGHT: (C)2010,JPO&INPIT |
