发明名称 PELLICLE FOR LITHOGRAPHY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a pellicle for lithography for extremely decreasing the amount of exhaustion of inorganic gas by sulfuric acid, nitrogen acid, chlorine, organic acid or the like by forming an oxidized film by a plasma electrolytic oxidation method on the surface of a pellicle frame. <P>SOLUTION: This pellicle for lithography includes a pellicle film, and a pellicle frame for supporting the pellicle film. The pellicle frame is manufactured of an aluminum alloy having the oxidized film formed by the plasma electrolytic oxidation method. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010107986(A) 申请公布日期 2010.05.13
申请号 JP20090250508 申请日期 2009.10.30
申请人 MST TECHNOLOGY CO LTD 发明人 KIM BAE YEON;KIM KWANG YOUP;KIM SUN YOPPU
分类号 G03F1/64 主分类号 G03F1/64
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