NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to reduce costs by reducing a chip size per one bit by laminating a plurality of electrode layers on a silicon substrate. CONSTITUTION: A plurality of insulating layers(15) and electrode layers(16) are alternatively laminated on a first laminate(ML1). A second laminate(ML2) is formed on the first laminate. A plurality of insulating layers(17) and electrode layers(18) are alternatively laminated on the second laminate. A penetration hole(36) passes through the first and second laminates. The insulating layer is formed on the inner surface of the penetration hole. A semiconductor pillar is buried inside the penetration hole.