SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to prevent the short of the conductive layer between blocks by blocking the connection between residual conductive layers of the adjacent blocks. CONSTITUTION: A laminate is arranged on a semiconductor substrate. The semiconductor layer is positioned within a hole which passes through the laminate. A charge accumulating layer is arranged between the conductive layer and the semiconductor layer. The laminate is divided into a plurality of blocks with a slit(30) in which the interlayer dielectric is buried. A memory string comprises a memory cell(3) which is serially connected to the laminating direction. The blocks are surrounded with the slits formed by a closed pattern.