| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device with a thin-film transistor, which has a low leak and small variance in characteristics. SOLUTION: The display device has the thin-film transistor formed on a substrate having a display part. The thin-film transistor includes a gate electrode, a gate insulating film formed covering the gate electrode, a semiconductor film laminate formed on an upper surface of the gate insulating film over the gate electrode and comprising a sequential laminate obtained by sequentially laminating at least a polycrystalline semiconductor film, an amorphous semiconductor film, and a high-density doped amorphous semiconductor, and a first and a second electrode disposed on an upper surface of the semiconductor laminate opposite each other with a region overlapping with the gate electrode interposed therebetween. The high-density doped amorphous semiconductor layer between the first and second electrodes is removed to such an extent that the amorphous semiconductor film as a lower layer is exposed, and the semiconductor film laminates are formed right below wiring extended from the first electrode and wiring extended from the second electrode. COPYRIGHT: (C)2010,JPO&INPIT |
