| 摘要 |
PROBLEM TO BE SOLVED: To obtain an IGBT which has both a fast switching speed and low ON resistance. SOLUTION: In the IGBT 10, a crystal defect layer 25 is formed in an n-type layer 102 in an active region 20 and a crystal defect layer 25 is formed in a p-type substrate 101 in a non-active region 40. Namely, the crystal defect layer 25 in the active region 20 is formed at a shallower position from a surface than the crystal defect layer 25 in the non-active region 40. In this IGBT 10, a hole implantation amount is made small in the non-active region 40 with this constitution to make the switching speed fast. A decrease in hole implantation amount in the active region 20 becomes less than that in the non-active region 40. Therefore, an increase in ON resistance at this time is suppressed. COPYRIGHT: (C)2010,JPO&INPIT |
