| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method in which opposed electrodes can be easily located to be connected with a reduced contact resistance, and a channel length can be shortened compared to a gap length between the electrodes, and to provide a field-effect transistor including the semiconductor element, its manufacturing method and a semiconductor device including the semiconductor element. Ž<P>SOLUTION: The semiconductor element 4 having an elongate rod shape includes a semiconductor 1 composed of a semiconductor material, and a first electrode 2 and a second electrode 3 composed of a magnetic conductive material and connected to both sides of the semiconductor 1. The semiconductor element 4 is formed in a self-alignment manner in which magnetic contact is made in the first electrode 2 and the second electrode 3 with respect to a source electrode 22 and a drain electrode 23 having a magnetized layer of a magnetic material by connecting the two electrodes so that the field-effect transistor 20 is formed. The first and second electrodes 2 and 3 function as the extension of the source electrode 22 and the drain electrode 23. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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