| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can comparatively easily control a work function of a gate electrode formed of metal even if heat treatment is performed after the formation of the gate electrode. Ž<P>SOLUTION: Impurities are injected into a metal film 3 for gate electrodes formed in a pFET region Rp after forming a gate insulating film 2 and the metal film 3 for gate electrodes one by one on a semiconductor substrate 1 of an nFET region Rn and pFET region Rp. By this, since the composition of the metal film 3 for gate electrodes formed in the pFET region Rp can be changed, the work function of the gate electrode of the pFET region Rp formed by the metal film 3 for gate electrodes can be changed. Therefore, the gate electrodes having different work functions can be formed easily in the nFET region Rn and the pFET region Rp. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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