发明名称 |
In-Line Wafer Thickness Sensing |
摘要 |
A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.
|
申请公布号 |
US2010120333(A1) |
申请公布日期 |
2010.05.13 |
申请号 |
US20090610979 |
申请日期 |
2009.11.02 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SIN GARRETT H.;JAIN SANJEEV;SWEDEK BOGUSLAW A.;KARUPPIAH LAKSHMANAN |
分类号 |
B24B49/04;B24B49/10;H01L21/304;H01L21/66 |
主分类号 |
B24B49/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|