| 摘要 |
<p>PURPOSE: A semiconductor memory device and a method for manufacturing the same are provided to improve a driving property by obtain an one-time programmable(OTP) cell with a high cell-operation-current and a narrow distribution of a current value. CONSTITUTION: An OTP cell includes an OTP gate(140a) and a fuse electrode(140b). An electrically erasable programmable read only memory includes a memory transistor and a selection transistor. The memory transistor includes a first gate. The selection transistor includes a second gate. A first highly doped impurity region(132a), in which the OTP cell is overlapped with a fuse electrode, is formed on the lower side of the fuse electrode.</p> |
