| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high quality, high performance semiconductor manufacturing apparatus which avoids the generation of dust and the degradation of durability by mitigating ion bombardment, and at the same time, is excellent in the uniformity control of plasma density by suppressing plasma diffusion. <P>SOLUTION: In the semiconductor manufacturing apparatus, a hollow plasma generation unit 8 having a recess is directly formed in the center of the sidewall of a vacuum chamber 1. The recess of the hollow plasma generation unit 8 is opened toward the circumferential direction of a wafer W. <P>COPYRIGHT: (C)2010,JPO&INPIT |
