| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric cell from which a photosensitive material is never separated even if it is heat-treated at low temperatures. <P>SOLUTION: In the photoelectric cell having a porous metal oxide semiconductor film formed by adsorbing the photosensitive material on an electrode layer surface, the porous metal oxide semiconductor film is made of (i) titanium oxide particles prepared by adsorbing a visible light absorbing photosensitive material, (ii) titanium oxide particles to adsorb photosensitive material formed by absorbing rays from a near infrared ray to an infrared ray, and/or (iii) titanium oxide particles formed by absorbing a near ultraviolet ray absorbing rays of photosensitive material. The titanium oxide particles to adsorb the photosensitive materials of (i) to (iii) are respectively made of a mixture of titanium oxide particulates of which the average particle size is in a range of 5 to 200 nm, and a porous titanium oxide particulate aggregates of which the average particle size is in the range 0.5 to 10 μm, and the pore volume is in the range 0.1 to 0.8 ml/g, while the porous metal oxide semiconductor film (1) is obtained by being subjected to heat treatment at 80 to 200°C. <P>COPYRIGHT: (C)2010,JPO&INPIT |
